Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate

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Description

The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 10{sup 9}/cm{sup 2}. Such high dislocation densities degrade both the electronic and photonic properties of the material. The density of dislocations can be decreased by orders of magnitude using cantilever epitaxy (CE), which employs prepatterned sapphire substrates to provide reduced-dimension mesa regions for nucleation and etched trenches between them for suspended lateral growth of GaN or AlGaN. The substrate is prepatterned with narrow lines and etched to a depth that permits coalescence of laterally growing III-N nucleated on the mesa surfaces before ... continued below

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3 p.

Creation Information

ASHBY,CAROL I.; WILLAN,CHRISTINE C.; HAN,JUNG; MISSERT,NANCY A.; PROVENCIO,PAULA P.; FOLLSTAEDT,DAVID M. et al. July 31, 2000.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 34 times , with 9 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 10{sup 9}/cm{sup 2}. Such high dislocation densities degrade both the electronic and photonic properties of the material. The density of dislocations can be decreased by orders of magnitude using cantilever epitaxy (CE), which employs prepatterned sapphire substrates to provide reduced-dimension mesa regions for nucleation and etched trenches between them for suspended lateral growth of GaN or AlGaN. The substrate is prepatterned with narrow lines and etched to a depth that permits coalescence of laterally growing III-N nucleated on the mesa surfaces before vertical growth fills the etched trench. Low dislocation densities typical of epitaxial lateral overgrowth (ELO) are obtained in the cantilever regions and the TD density is also reduced up to 1 micrometer from the edge of the support regions.

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3 p.

Notes

OSTI as DE00760005

Medium: P; Size: 3 pages

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  • Journal Name: Applied Physics Letters; Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND2000-1919J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1063/1.1325394 | External Link
  • Office of Scientific & Technical Information Report Number: 760005
  • Archival Resource Key: ark:/67531/metadc709202

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  • July 31, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 7:31 p.m.

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ASHBY,CAROL I.; WILLAN,CHRISTINE C.; HAN,JUNG; MISSERT,NANCY A.; PROVENCIO,PAULA P.; FOLLSTAEDT,DAVID M. et al. Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate, article, July 31, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709202/: accessed September 26, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.