Evaluation of CZT crystals from the former Soviet Union

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Vertical high pressure Bridgman (VHPB) Cd{sub 1{minus}x}Zn{sub x}Te (0.04 < x < 0.24) detector crystals grown in the Ukraine and Russia have been evaluated and compared to US-grown materials. Various analytical techniques were used to study the materials for trace impurities, precipitates, crystallinity, and electrical transport properties. Relatively high concentrations of carbon and trace impurities such as Se, Nd and Si have been detected in the crystals. In most cases, the crystals showed lower resistivity than US-grown CZT. However, recent crystals grown in Russia exhibited better detector performance than those grown in prior years, and good response to an {sup ... continued below

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19 p.

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Hermon, H.; Schieber, M.; James, R. B.; Antolak, A. J.; Morse, D. H.; Brunett, B. et al. January 26, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Vertical high pressure Bridgman (VHPB) Cd{sub 1{minus}x}Zn{sub x}Te (0.04 < x < 0.24) detector crystals grown in the Ukraine and Russia have been evaluated and compared to US-grown materials. Various analytical techniques were used to study the materials for trace impurities, precipitates, crystallinity, and electrical transport properties. Relatively high concentrations of carbon and trace impurities such as Se, Nd and Si have been detected in the crystals. In most cases, the crystals showed lower resistivity than US-grown CZT. However, recent crystals grown in Russia exhibited better detector performance than those grown in prior years, and good response to an {sup 241}Am radioactive source was found. Electron lifetimes below 1 {micro}s were measured in crystals having significant numbers of micro-defects, compared to lifetimes of 5--15 {micro}s found in spectrometer grade materials produced in the US. Furthermore, the zinc composition along the growth axis showed better homogeneity in comparison with the US material.

Physical Description

19 p.

Notes

INIS; OSTI as DE00755948

Medium: P; Size: 19 pages

Source

  • Conference on Room Temperature Semi Conductor Detectors for Remote Portable and In-Situ Radiation Measurement Systems, Jerusalem (IL), 01/26/1998--01/29/1998

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  • Report No.: SAND2000-8609C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 755948
  • Archival Resource Key: ark:/67531/metadc709185

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • January 26, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 7, 2017, 4:28 p.m.

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Hermon, H.; Schieber, M.; James, R. B.; Antolak, A. J.; Morse, D. H.; Brunett, B. et al. Evaluation of CZT crystals from the former Soviet Union, article, January 26, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709185/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.