High-Performance, 0.6-eV, GA0.32In0.68As/In0.32P0.68 Thermophotovoltaic Converters and Monolithically Interconnected Modules

PDF Version Also Available for Download.

Description

Recent progress in the development of high-performance, 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 thermophotovoltaic (TPV) converters and monolithically interconnected modules (MIMs) is described. The converter structure design is based on using a lattice-matched InAs0.32P0.68/Ga0.32In0.68As/InAs0.32P0.68 double-heterostructure (DH) device, which is grown lattice-mismatched on an InP substrate, with an intervening compositionally step-graded region of InAsyP1-y. The Ga0.32In0.68As alloy has a room-temperature band gap of {approx}0.6 eV and contains a p/n junction. The InAs0.32P0.68 layers have a room-temperature band gap of {approx}0.96 eV and serve as passivation/confinement layers for the Ga0.32In0.68As p/n junction. InAsyP1-y step grades have yielded DH converters with superior electronic quality and performance characteristics. ... continued below

Physical Description

vp.

Creation Information

Wanlass, M. W.; Carapella, J. J.; Duda, A.; Emery, K.; Gedvilas, L.; Moriarty, T. et al. December 15, 1998.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Recent progress in the development of high-performance, 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 thermophotovoltaic (TPV) converters and monolithically interconnected modules (MIMs) is described. The converter structure design is based on using a lattice-matched InAs0.32P0.68/Ga0.32In0.68As/InAs0.32P0.68 double-heterostructure (DH) device, which is grown lattice-mismatched on an InP substrate, with an intervening compositionally step-graded region of InAsyP1-y. The Ga0.32In0.68As alloy has a room-temperature band gap of {approx}0.6 eV and contains a p/n junction. The InAs0.32P0.68 layers have a room-temperature band gap of {approx}0.96 eV and serve as passivation/confinement layers for the Ga0.32In0.68As p/n junction. InAsyP1-y step grades have yielded DH converters with superior electronic quality and performance characteristics. Details of the microstructure of the converters are presented. Converters prepared for this work were grown by atmospheric-pressure metalorganic vapor-phase epitaxy (APMO VPE) and were processed using a combination of photolithography, wet-chemical etching, and conventional metal and insulator deposition techniques. Excellent performance characteristics have been demonstrated for the 0.6-eV TPV converters. Additionally, the implementation of MIM technology in these converters has been highly successful.

Physical Description

vp.

Notes

OSTI as DE00007141

Source

  • Presented at the 4th Conference on Thermophotovoltaic Generation of Electricity, Denver, CO (US), 10/11/1998--10/14/1998

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE00007141
  • Report No.: NREL/CP-520-25539
  • Grant Number: AC36-99GO10337
  • Office of Scientific & Technical Information Report Number: 7141
  • Archival Resource Key: ark:/67531/metadc709174

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 15, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • March 29, 2016, 7:35 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 3

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Wanlass, M. W.; Carapella, J. J.; Duda, A.; Emery, K.; Gedvilas, L.; Moriarty, T. et al. High-Performance, 0.6-eV, GA0.32In0.68As/In0.32P0.68 Thermophotovoltaic Converters and Monolithically Interconnected Modules, article, December 15, 1998; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc709174/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.