Precursor ion damage and single event gate rupture in thin oxides

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Gate oxide electric fields are expected to increase to greater than 5 MV/cm as feature size approaches 0.1 micrometers in advanced integrated circuit (IC) technologies. Work by Johnston, et al. raised the concern that single event gate rupture (SEGR) may limit the scaling of advanced ICs for space applications. SEGR has also been observed in field programmable gate arrays, which rely on thin dielectrics for electrical programming at very high electric fields. The focus of this effort is to further explore the mechanisms for SEGR in thin gate oxides. The authors examine the characteristics of heavy ion induced breakdown and ... continued below

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7 p.

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Sexton, F.W.; Fleetwood, D.M.; Shaneyfelt, M.R.; Dodd, P.E.; Hash, G.L.; Schanwald, L.P. et al. February 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Gate oxide electric fields are expected to increase to greater than 5 MV/cm as feature size approaches 0.1 micrometers in advanced integrated circuit (IC) technologies. Work by Johnston, et al. raised the concern that single event gate rupture (SEGR) may limit the scaling of advanced ICs for space applications. SEGR has also been observed in field programmable gate arrays, which rely on thin dielectrics for electrical programming at very high electric fields. The focus of this effort is to further explore the mechanisms for SEGR in thin gate oxides. The authors examine the characteristics of heavy ion induced breakdown and compare them to ion induced damage in thin gate oxides. Further, the authors study the impact of precursor damage in oxides on SEGR threshold. Finally, they compare thermal and nitrided oxides to see if SEGR is improved by incorporating nitrogen in the oxide.

Physical Description

7 p.

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INIS; OSTI as DE98005038

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  • IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998

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  • Other: DE98005038
  • Report No.: SAND--98-0452C
  • Report No.: CONF-980705--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 650374
  • Archival Resource Key: ark:/67531/metadc709029

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  • February 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 14, 2016, 8:43 p.m.

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Sexton, F.W.; Fleetwood, D.M.; Shaneyfelt, M.R.; Dodd, P.E.; Hash, G.L.; Schanwald, L.P. et al. Precursor ion damage and single event gate rupture in thin oxides, article, February 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709029/: accessed August 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.