Ba{sub 1{minus}x}Sr{sub x}TiO{sub 3} thin film sputter-growth processes and electrical property relationships for high frequency devices

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Precise control of Ba{sub 1{minus}x}Sr{sub x}Ti0{sub 3} (BST) film composition is critical for the production of high-quality BST thin films. Specifically, it is known that nonstoichiometry greatly affects the electrical properties of BST film capacitors. The authors are investigating the composition-microstructure-electrical property relationships of polycrystalline BST films produced by magnetron sputter-deposition using a single target with a Ba/Sr ratio of 50/50 and a (Ba+Sr)/Ti ratio of 1.0. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O{sub 2}) process pressure, while the O{sub 2}/Ar ratio did not ... continued below

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9 p.

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Im, J.; Auciello, O.; Streiffer, S. K.; Baumann, P. K.; Eastman, J. A.; Kaufman, D. Y. et al. December 21, 1999.

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Description

Precise control of Ba{sub 1{minus}x}Sr{sub x}Ti0{sub 3} (BST) film composition is critical for the production of high-quality BST thin films. Specifically, it is known that nonstoichiometry greatly affects the electrical properties of BST film capacitors. The authors are investigating the composition-microstructure-electrical property relationships of polycrystalline BST films produced by magnetron sputter-deposition using a single target with a Ba/Sr ratio of 50/50 and a (Ba+Sr)/Ti ratio of 1.0. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O{sub 2}) process pressure, while the O{sub 2}/Ar ratio did not strongly affect the metal ion composition. The crystalline quality as well as the measured dielectric constant, dielectric tunability, and electrical breakdown voltage of BST films have been found to be strongly dependent on the composition of the BST films, especially the (Ba+Sr)/Ti ratio. The authors discuss the impact of BST film composition control, through film deposition and process parameters, on the electrical properties of BST capacitors for high frequency devices.

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9 p.

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OSTI as DE00751838

Medium: P; Size: 9 pages

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  • Materials Research Society, Boston, MA (US), 11/29/1999--12/03/1999

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  • Report No.: ANL/MSD/CP-99575
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 751838
  • Archival Resource Key: ark:/67531/metadc709014

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  • December 21, 1999

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 11, 2017, 7:30 p.m.

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Im, J.; Auciello, O.; Streiffer, S. K.; Baumann, P. K.; Eastman, J. A.; Kaufman, D. Y. et al. Ba{sub 1{minus}x}Sr{sub x}TiO{sub 3} thin film sputter-growth processes and electrical property relationships for high frequency devices, article, December 21, 1999; Illinois. (digital.library.unt.edu/ark:/67531/metadc709014/: accessed December 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.