Epitaxial Electronic Oxides on Semiconductors Using Pulsed-Laser Deposition

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We describe the growth and properties of epitaxial (OO1) CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method. Hydrogen gas is introduced during film growth to eliminate the presence of the GeOs from the semiconductor surface during the initial nucleation of the metal oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal oxide to reside at ... continued below

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Norton, D.P.; Budai, J.D. & Chisholm, M.F. December 1, 1999.

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We describe the growth and properties of epitaxial (OO1) CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method. Hydrogen gas is introduced during film growth to eliminate the presence of the GeOs from the semiconductor surface during the initial nucleation of the metal oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria. the metal oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. Preliminary structural and electrical properties are reported.

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OSTI as DE00751431

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  • Symposium on Substrate Engineering, Boston, MA (US), 11/29/1999--12/03/1999

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  • Report No.: ORNL/CP-105770
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 751431
  • Archival Resource Key: ark:/67531/metadc708933

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Office of Scientific & Technical Information Technical Reports

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  • December 1, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • Jan. 21, 2016, 8:17 p.m.

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Norton, D.P.; Budai, J.D. & Chisholm, M.F. Epitaxial Electronic Oxides on Semiconductors Using Pulsed-Laser Deposition, article, December 1, 1999; Tennessee. (digital.library.unt.edu/ark:/67531/metadc708933/: accessed December 12, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.