Nucleation and Growth of GaN on GaAs (001) Substrates

PDF Version Also Available for Download.

Description

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N<SUB>2</SUB>. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Physical Description

56 Pages

Creation Information

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei et al. May 3, 1999.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 14 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N<SUB>2</SUB>. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Physical Description

56 Pages

Source

  • Journal Name: Journal of Applied Physics

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE00007035
  • Report No.: SAND99-1108J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 7035
  • Archival Resource Key: ark:/67531/metadc708766

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 3, 1999

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • Nov. 30, 2016, 1:38 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 3
Total Uses: 14

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei et al. Nucleation and Growth of GaN on GaAs (001) Substrates, article, May 3, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc708766/: accessed June 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.