Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor

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A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors ... continued below

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13 Pages

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Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M. et al. March 16, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

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13 Pages

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  • Journal Name: Applied Physics Letters

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  • Other: DE00007022
  • Report No.: SAND99-0612J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 7022
  • Archival Resource Key: ark:/67531/metadc708762

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  • March 16, 1999

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • Dec. 8, 2016, 8:08 p.m.

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Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M. et al. Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor, article, March 16, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc708762/: accessed September 26, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.