Charge collection and charge pulse formation in highly irradiated silicon planar detectors

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The interpretation of experimental data and predictions for future experiments for high-energy physics have been based on conventional methods like capacitance versus voltage (C-V) measurements. Experiments carried out on highly irradiated detectors show that the kinetics of the charge collection and the dependence of the charge pulse amplitude on the applied bias are deviated too far from those predicted by the conventional methods. The described results show that in highly irradiated detectors, at a bias lower than the real full depletion voltage (V{sub fd}), the kinetics of the charge collection (Q) contains a fast and a slow component. At V ... continued below

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21 p.

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Dezillie, B.; Li, Z. & Eremin, V. June 1, 1998.

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  • Dezillie, B.
  • Li, Z. Brookhaven National Lab., Upton, NY (United States)
  • Eremin, V. Academy of Science of Russia, St. Petersburg (Russian Federation). A.F. Ioffe Physico-Technical Inst.

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Description

The interpretation of experimental data and predictions for future experiments for high-energy physics have been based on conventional methods like capacitance versus voltage (C-V) measurements. Experiments carried out on highly irradiated detectors show that the kinetics of the charge collection and the dependence of the charge pulse amplitude on the applied bias are deviated too far from those predicted by the conventional methods. The described results show that in highly irradiated detectors, at a bias lower than the real full depletion voltage (V{sub fd}), the kinetics of the charge collection (Q) contains a fast and a slow component. At V = V{sub fd}*, which is the full depletion voltage traditionally determined by the extrapolation of the fast comopnent amplitude of q versus bias to the maximum value or from the standard C-V measurements, the pulse has a slow component with significant amplitude. This slow component can only be eliminated by applying additional bias that amounts to the real full depletion voltage (V{sub fd}) or more. The above mentioned regularities are explained in this paper in terms of a model of an irradiated detector with multiple regions. This model allows one to use C-V, in a modified way, as well as TChT (transient charge technique) measurements to determine the V{sub fd} for highly irradiated detectors.

Physical Description

21 p.

Notes

INIS; OSTI as DE98007198

Source

  • 18. European symposium on semiconductor detectors, new developments in radiation detectors, Schloss Elmau (Germany), 14-17 Jun 1998

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  • Other: DE98007198
  • Report No.: BNL--65637
  • Report No.: CONF-980676--
  • Grant Number: AC02-98CH10886
  • Office of Scientific & Technical Information Report Number: 661727
  • Archival Resource Key: ark:/67531/metadc708700

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  • June 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • Nov. 9, 2015, 9:35 p.m.

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Dezillie, B.; Li, Z. & Eremin, V. Charge collection and charge pulse formation in highly irradiated silicon planar detectors, article, June 1, 1998; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc708700/: accessed August 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.