Retention and switching kinetics of protonated gate field effect transistors

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The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

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25 p.

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DEVINE,R.A.B. & HERRERA,GILBERT V. May 23, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

Physical Description

25 p.

Notes

OSTI as DE00755619

Medium: P; Size: 25 pages

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  • Journal Name: Applied Physics Letters; Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND2000-1307J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 755619
  • Archival Resource Key: ark:/67531/metadc708637

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  • May 23, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 6:18 p.m.

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DEVINE,R.A.B. & HERRERA,GILBERT V. Retention and switching kinetics of protonated gate field effect transistors, article, May 23, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc708637/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.