Development of 1.25 eV InGaAsN for triple junction solar cells

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Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV ... continued below

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3 p.

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LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH & BACA,ALBERT G. May 16, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

Physical Description

3 p.

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OSTI as DE00756112

Medium: P; Size: 3 pages

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  • 28th IEEE Photovoltaics Specialists Conference, Anchorage, AK (US), 09/19/2000--09/22/2000

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  • Report No.: SAND2000-1233C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 756112
  • Archival Resource Key: ark:/67531/metadc708595

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  • May 16, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 7:21 p.m.

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LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH & BACA,ALBERT G. Development of 1.25 eV InGaAsN for triple junction solar cells, article, May 16, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc708595/: accessed September 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.