Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995

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This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment ... continued below

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107 p.

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Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E. & Shafarman, W.N. June 1, 1995.

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Description

This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing {approximately}8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described. 73 refs., 54 figs., 34 tabs.

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107 p.

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OSTI as DE95009237

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  • Other Information: PBD: Jun 1995

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  • Other: DE95009237
  • Report No.: NREL/TP--451-8017
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/72908 | External Link
  • Office of Scientific & Technical Information Report Number: 72908
  • Archival Resource Key: ark:/67531/metadc708587

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  • June 1, 1995

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 31, 2016, 8:19 p.m.

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Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E. & Shafarman, W.N. Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995, report, June 1, 1995; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc708587/: accessed August 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.