Characterization of electrical linewidth test structures patterned in (100) Silicon-on-Insulator for use as CD standards

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This paper describes the fabrication and measurement of the linewidths of the reference segments of cross-bridge resistors patterned in (100) Bonded and Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) of the reference segments of a selection of the cross-bridge resistor test structures were measured both electrically and by Scanning-Electron Microscopy (SEM) cross-section imaging. The reference-segment features were aligned with <110> directions in the BESOI surface material and had drawn linewidths ranging from 0.35 to 3.0 {micro}m. They were defined by a silicon micro-machining process which results in their sidewalls being atomically-planar and smooth and inclined at 54.737{degree} to ... continued below

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7 p.

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CRESSWELL,M.W.; ALLEN,R.A.; GHOSHTAGORE,R.N.; GUILLAUME,N.M.P.; SHEA,PATRICK J.; EVERIST,SARAH C. et al. February 29, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

This paper describes the fabrication and measurement of the linewidths of the reference segments of cross-bridge resistors patterned in (100) Bonded and Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) of the reference segments of a selection of the cross-bridge resistor test structures were measured both electrically and by Scanning-Electron Microscopy (SEM) cross-section imaging. The reference-segment features were aligned with <110> directions in the BESOI surface material and had drawn linewidths ranging from 0.35 to 3.0 {micro}m. They were defined by a silicon micro-machining process which results in their sidewalls being atomically-planar and smooth and inclined at 54.737{degree} to the surface (100) plane of the substrate. This (100) implementation may usefully complement the attributes of the previously-reported vertical-sidewall one for selected reference-material applications. For example, the non-orthogonal intersection of the sidewalls and top-surface planes of the reference-segment features may alleviate difficulties encountered with atomic-force microscope measurements. In such applications it has been reported that it may be difficult to maintain probe-tip control at the sharp 90{degree} outside corner of the sidewalls and the upper surface. A second application is refining to-down image-processing algorithms and checking instrument performance. Novel aspects of the (100) SOI implementation that are reported here include the cross-bridge resistor test-structure architecture and details of its fabrication. The long-term goal is to develop a technique for the determination of the absolute dimensions of the trapezoidal cross-sections of the cross-bridge resistors' reference segments, as a prelude to developing them for dimensional reference applications. This is believed to be the first report of electrical CD measurements made on test structures of the cross-bridge resistor type that have been patterned in (100) SOI material. The electrical CD results are compared with cross-section SEM measurements made on the same features.

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7 p.

Notes

OSTI as DE00752161

Medium: P; Size: 7 pages

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  • ICCMTS 2000, Monterey, CA (US), 03/14/2000--03/16/2000

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  • Report No.: SAND2000-0509C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 752161
  • Archival Resource Key: ark:/67531/metadc708503

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • February 29, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 11, 2017, 3:09 p.m.

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CRESSWELL,M.W.; ALLEN,R.A.; GHOSHTAGORE,R.N.; GUILLAUME,N.M.P.; SHEA,PATRICK J.; EVERIST,SARAH C. et al. Characterization of electrical linewidth test structures patterned in (100) Silicon-on-Insulator for use as CD standards, article, February 29, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc708503/: accessed October 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.