Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

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An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with ... continued below

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3 p.

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WITCZAK,STEVEN C.; WINOKUR,PETER S.; LACOE,RONALD C. & MAYER,DONALD C. February 1, 2000.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 11 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma}-rays at 100 C and zero bias, where the dopant deactivation is significant.

Physical Description

3 p.

Notes

INIS; OSTI as DE00751224

Medium: P; Size: 3 pages

Source

  • Journal Name: Applied Physics Letters; Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND2000-0314J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 751224
  • Archival Resource Key: ark:/67531/metadc708431

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • February 1, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 7:20 p.m.

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WITCZAK,STEVEN C.; WINOKUR,PETER S.; LACOE,RONALD C. & MAYER,DONALD C. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants, article, February 1, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc708431/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.