Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998

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This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') hole ... continued below

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Schiff, E. A.; Gu, Q.; Jiang, L.; Lyou, J.; Nurdjaja, I. & Rao, P. (Department of Physics, Syracuse University) December 28, 1998.

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This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') hole drift mobilities in some specially prepared a-Si:H samples. Disturbingly, solar cells made with such materials did not show improved efficiencies. Researchers significantly clarified the relationship of ambipolar diffusion-length measurements to hole drift mobilities in a-Si:H, and have shown that the photocapacitance measurements can be interpreted in terms of hole drift mobilities in amorphous silicon. They also completed a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, trimethylboron, and hydrogen as precursor gases.

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OSTI as DE00006707

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  • Other Information: PBD: 28 Dec 1998

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  • Other: DE00006707
  • Report No.: NREL/SR-520-25922
  • Grant Number: AC36-99-GO10337
  • DOI: 10.2172/6707 | External Link
  • Office of Scientific & Technical Information Report Number: 6707
  • Archival Resource Key: ark:/67531/metadc708378

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  • December 28, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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Schiff, E. A.; Gu, Q.; Jiang, L.; Lyou, J.; Nurdjaja, I. & Rao, P. (Department of Physics, Syracuse University). Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998, report, December 28, 1998; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc708378/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.