Conduction band mass determinations for n-type InGaAs/InAlAs single quantum wells

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The authors report the measurement of the conduction band mass in n-type single 27-ML-wide InGaAs/InAlAs quantum well lattice matched to InP using two methods: (1) Magnetoluminescence spectroscopy and (2) far-infrared cyclotron resonance. The magnetoluminescence method utilizes Landau level transitions between 0 and 14 T at 1.4 K. The far infrared cyclotron resonance measurements were made at 4.2 K and to fields as large up to 18 T. The 2D-carrier density N{sub 2D} = 3 {times} 10{sup 11} cm{sup {minus}2} at low temperatures. The magnetoluminescence technique yielded an effective conduction-band mass of m{sub c} = 0.062m{sub 0} while the far infrared ... continued below

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7 p.

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Jones, E.D.; Reno, J.L.; Kotera, Nobuo & Wang, Y. May 1, 1998.

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Authors

  • Jones, E.D.
  • Reno, J.L. Sandia National Labs., Albuquerque, NM (United States)
  • Kotera, Nobuo Kyushu Inst. of Tech., Iizuka, Fukuoka (Japan)
  • Wang, Y. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors report the measurement of the conduction band mass in n-type single 27-ML-wide InGaAs/InAlAs quantum well lattice matched to InP using two methods: (1) Magnetoluminescence spectroscopy and (2) far-infrared cyclotron resonance. The magnetoluminescence method utilizes Landau level transitions between 0 and 14 T at 1.4 K. The far infrared cyclotron resonance measurements were made at 4.2 K and to fields as large up to 18 T. The 2D-carrier density N{sub 2D} = 3 {times} 10{sup 11} cm{sup {minus}2} at low temperatures. The magnetoluminescence technique yielded an effective conduction-band mass of m{sub c} = 0.062m{sub 0} while the far infrared cyclotron resonance measurements gave m{sub c} = 0.056m{sub 0}, where m{sub 0} is the free electron mass. Both measurements show no evidence for any significant conduction-band nonparabolicity.

Physical Description

7 p.

Notes

OSTI as DE98005453

Source

  • SPIE photonics Taiwan `98, Taipei (Taiwan, Province of China), 9-11 Jul 1998

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  • Other: DE98005453
  • Report No.: SAND--98-0111C
  • Report No.: CONF-980729--
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/658197 | External Link
  • Office of Scientific & Technical Information Report Number: 658197
  • Archival Resource Key: ark:/67531/metadc708359

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  • May 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • Aug. 23, 2016, 2:58 p.m.

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Jones, E.D.; Reno, J.L.; Kotera, Nobuo & Wang, Y. Conduction band mass determinations for n-type InGaAs/InAlAs single quantum wells, report, May 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc708359/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.