Characterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition

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Europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y{sub 2}O{sub 3}, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in ... continued below

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27 p.

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McKittrick, J.; Bacalski, C. F.; Hirata, G. A.; Hubbard, K. M.; Pattillo, S. G.; Salazar, K. V. et al. December 1, 1998.

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  • Los Alamos National Laboratory
    Publisher Info: Los Alamos National Lab., Materials Science and Technology Div., NM (United States)
    Place of Publication: New Mexico

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Description

Europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y{sub 2}O{sub 3}, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y{sub 2}O{sub 3}:Eu{sup 3+} was observed in x-ray diffraction for deposition temperatures {ge}600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra.

Physical Description

27 p.

Notes

INIS; OSTI as DE99000671

Source

  • 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997

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  • Other: DE99000671
  • Report No.: LA-UR--98-1970
  • Report No.: CONF-971201--
  • Grant Number: W-7405-ENG-36
  • DOI: 10.2172/676881 | External Link
  • Office of Scientific & Technical Information Report Number: 676881
  • Archival Resource Key: ark:/67531/metadc708283

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  • December 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • Nov. 3, 2016, 1:35 p.m.

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McKittrick, J.; Bacalski, C. F.; Hirata, G. A.; Hubbard, K. M.; Pattillo, S. G.; Salazar, K. V. et al. Characterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition, report, December 1, 1998; New Mexico. (digital.library.unt.edu/ark:/67531/metadc708283/: accessed December 14, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.