Techniques for measuring the composition of hydrogenated amorphous silicon-germanium alloys

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The authors grow hydrogenated amorphous silicon-germanium alloys by the hot-wire chemical vapor deposition technique at deposition rates between 0.5 and 1.4 nanometers per second. They prepared a set of these alloys to determine the concentrations of the alloying elements as measured by various techniques. This set consists of samples throughout the range of germanium alloying from 0% (a-Si:H) to 100% (a-Ge:H). They find that by making the appropriate calibrations and corrections, their compositional measurements agreement between the various techniques. Nuclear reaction analysis, Fourier transform infrared spectroscopy, and secondary ion mass spectrometry (SIMS) all yield similar hydrogen contents, within {+-}20% for ... continued below

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Nelson, B.P.; Xu, Y.; Webb, J.D.; Mason, A.; Reedy, R.C.; Gedvilas, L.M. et al. October 25, 1999.

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The authors grow hydrogenated amorphous silicon-germanium alloys by the hot-wire chemical vapor deposition technique at deposition rates between 0.5 and 1.4 nanometers per second. They prepared a set of these alloys to determine the concentrations of the alloying elements as measured by various techniques. This set consists of samples throughout the range of germanium alloying from 0% (a-Si:H) to 100% (a-Ge:H). They find that by making the appropriate calibrations and corrections, their compositional measurements agreement between the various techniques. Nuclear reaction analysis, Fourier transform infrared spectroscopy, and secondary ion mass spectrometry (SIMS) all yield similar hydrogen contents, within {+-}20% for each sample. Electron probe micro-analysis (EPMA) and SIMS yield silicon and germanium contents within {+-}7% of each other with results being confirmed by Rutherford backscattering. EPMA oxygen measurements are affected by highly oxidized surface layers, thus these data show larger O concentrations than those measured by SIMS.

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  • International Conference of Amorphous and Microcrystalline Semiconductors, Snowbird, UT (US), 05/22/1999--05/29/1999

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  • Report No.: NREL/CP--520-26933
  • Grant Number: AC36-99GO10337
  • Office of Scientific & Technical Information Report Number: 752521
  • Archival Resource Key: ark:/67531/metadc708118

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  • October 25, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 31, 2016, 5:48 p.m.

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Nelson, B.P.; Xu, Y.; Webb, J.D.; Mason, A.; Reedy, R.C.; Gedvilas, L.M. et al. Techniques for measuring the composition of hydrogenated amorphous silicon-germanium alloys, article, October 25, 1999; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc708118/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.