Analysis of Cu Diffusion in ZnTe-Based Contacts for Thin-Film CdS/CdTe Solar Cells

PDF Version Also Available for Download.

Description

Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 C to 300 C. Cu depletion is not observed when Ni is replaced ... continued below

Physical Description

vp.

Creation Information

Narayanswamy, C. (Department of Physics & Astronomy, University of Toledo) & Gessert, T. A. and Asher, S. E. (National Renewable Energy Laboratory) October 27, 1998.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 65 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 C to 300 C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.

Physical Description

vp.

Notes

OSTI as DE00006641

Source

  • Presented at the National Center for Photovoltaics Program Review Meeting, Denver, CO (US), 09/08/1998--09/11/1998

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE00006641
  • Report No.: NREL/CP-520-25689
  • Grant Number: AC36-83CH10093
  • Office of Scientific & Technical Information Report Number: 6641
  • Archival Resource Key: ark:/67531/metadc708056

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • October 27, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • March 31, 2016, 1:54 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 65

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Narayanswamy, C. (Department of Physics & Astronomy, University of Toledo) & Gessert, T. A. and Asher, S. E. (National Renewable Energy Laboratory). Analysis of Cu Diffusion in ZnTe-Based Contacts for Thin-Film CdS/CdTe Solar Cells, article, October 27, 1998; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc708056/: accessed August 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.