Ultrafast scanning tunneling microscopy (STM) using a photoexcited low-temperature-grown gallium arsenide tip

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In the quest for atomic spatial and picosecond temporal resolutions, several groups have integrated an STM tip with an ultrafast optoelectronic switch that gates the tunneling current from the tip. The authors report a novel ultrafast STM tip consisting of a cleaved GaAs substrate with a 1-{micro}m thick epilayer of low-temperature-grown GaAs (LT-GaAs) deposited on the face. since LT-GaAs has a carrier lifetime of 1 ps, the photo-excitatin of the tip with an ultrafast above-bandgap pulse provides carriers for the tunneling current and photoconductively gates the current from the tip with picoseconds time resolution. The authors use this tip to ... continued below

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4 p.

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Donati, G.P.; Some, D.; Rodriguez, G. & Taylor, A.J. August 1, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 19 times . More information about this article can be viewed below.

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  • Los Alamos National Laboratory
    Publisher Info: Los Alamos National Lab., Materials Science and Technology Div., NM (United States)
    Place of Publication: New Mexico

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In the quest for atomic spatial and picosecond temporal resolutions, several groups have integrated an STM tip with an ultrafast optoelectronic switch that gates the tunneling current from the tip. The authors report a novel ultrafast STM tip consisting of a cleaved GaAs substrate with a 1-{micro}m thick epilayer of low-temperature-grown GaAs (LT-GaAs) deposited on the face. since LT-GaAs has a carrier lifetime of 1 ps, the photo-excitatin of the tip with an ultrafast above-bandgap pulse provides carriers for the tunneling current and photoconductively gates the current from the tip with picoseconds time resolution. The authors use this tip to detect picosecond voltage transients on a coplanar stripline.

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4 p.

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OSTI as DE98003701

Source

  • Ultrafast phenomena `98, Muenchen (Germany), 12-17 Jul 1998

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  • Other: DE98003701
  • Report No.: LA-UR--98-610
  • Report No.: CONF-980740--
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 661701
  • Archival Resource Key: ark:/67531/metadc707996

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  • August 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • Nov. 3, 2016, 1:36 p.m.

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Donati, G.P.; Some, D.; Rodriguez, G. & Taylor, A.J. Ultrafast scanning tunneling microscopy (STM) using a photoexcited low-temperature-grown gallium arsenide tip, article, August 1, 1998; New Mexico. (digital.library.unt.edu/ark:/67531/metadc707996/: accessed December 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.