A thermophotovoltaic energy conversion device

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Description

A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the ... continued below

Physical Description

12 p.

Creation Information

Charache, G.W.; Baldasaro, P.F. & Egley, J.L. December 31, 1996.

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This patent is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this patent can be viewed below.

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Description

A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.

Physical Description

12 p.

Notes

OSTI as DE98007399

Source

  • Other Information: PBD: 1996

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  • Other: DE98007399
  • Report No.: PATENTS-US--A8703156
  • Grant Number: AC12-76SN00052
  • Office of Scientific & Technical Information Report Number: 663427
  • Archival Resource Key: ark:/67531/metadc707972

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Office of Scientific & Technical Information Technical Reports

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Creation Date

  • December 31, 1996

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • May 16, 2016, 6:08 p.m.

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Citations, Rights, Re-Use

Charache, G.W.; Baldasaro, P.F. & Egley, J.L. A thermophotovoltaic energy conversion device, patent, December 31, 1996; United States. (digital.library.unt.edu/ark:/67531/metadc707972/: accessed August 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.