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temperature and time, and reactor history and design may
be more important than the particular reactor conditions
during nucleation and growth. For example, it is
customary to introduce arsine into the reactor at or near
the beginning of a growth run. The time constant
associated with the arsine/Ge etching reaction depends
strongly on the arsine partial pressure. The
prenucleation heatup and soak times relative to this
etching time constant are now important parameters,
because they probably determine the state of the surface
immediately prior to nucleation.
5. SUMMARY AND CONCLUSIONS
Ge(100) substrates annealed in AsH3 exhibit surface
phases that differ significantly from As:Ge(100) and
clean Ge(100) annealed under UHV conditions. We
found that arsine etches Ge and precludes the
development of a single-domain surface. It also causes
step bunching and faceting.
Better devices and higher production yields may
result from careful manipulation of the pregrowth
conditions such as AsH3 partial pressure, annealing
temperature and time, and reactor history and design.
Contradictory results in the literature may be due to
variations of the pregrowth conditions, which, in most
cases, are not well documented.
We wish to thank Sarah Kurtz, DJ. Friedman, and J.
Geisz for useful discussions. We would also like to
thank K. Jones and M.M. Al-Jassim for the TEM
micrographs. The work was sponsored by the U. S.
Department of Energy, Office of Energy Research, Basic
Energy Sciences and by the U. S. Department of Energy
under contract number DE-AC36-83CH10093.
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NCPV preprints for the 2. world conference on photovoltaic solar energy conversion, article, September 1, 1998; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc707815/m1/75/: accessed October 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.