Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design Page: 1 of 22
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Simulation of Npn and Pnp AIGaN/GaN heterojunction bipolar
transistors performances: limiting factors and optimum design
C. Monier*, F. Ren, J. Han, P. C. Chang, R. J. Shul, K. P. Lee, A. P. Zhang, A. G. Baca,
and S. J. Pearton.
" C. Monier, K. P. Lee, and S. J. Pearton are with the Department of Materials Science and
Engineering, University of Florida, Gainesville, Florida 32611
* F. Ren, and A. P. Zhang are with the Department of Chemical Engineering, University of
Florida, Gainesville, Florida 32611.
* J. Han, P. C. Chang, R. J. Shul, and A. G. Baca are with Sandia National Laboratories,
Albuquerque, New Mexico 87185.
*: Current address at Sandia National Laboratories, Electronic mail: cmonier@sandia.gov
0
Abstract
The performance capabilities of Npn and Pnp AIGaN/GaN heterojunction bipolar transistors
have been investigated by using a drift-diffusion transport model. Numerical results have been
employed to study the effect of the p-type Mg doping and its incomplete ionization on device
performance. The high base resistance induced by the deep acceptor level is found to be the cause of
limited current gain values for Npn devices. Several computation approaches have been considered to
improve their performance. Reasonable improvement of the DC current gain 0 is observed by
realistically reducing the base thickness in accordance with processing limitations. Base transport
enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of
the base resistivity on high-frequency characteristics is investigated for Npn AIGaN/GaN devices.
Optimized predictions with maximum oscillation frequency value as high as fmAX =20 GHz and a
unilateral power gain- U =25 dB make this bipolar GaN-based technology compatible with
communication applications. Simulation results reveal that the restricted amount of free carriers fromSpecial Issue of IEEE Transactions on Electron Devices
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MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P. et al. Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design, article, April 25, 2000; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc707648/m1/1/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.