Design and performance of nitride-based UV LEDs

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In this paper, the authors overview several of the critical materials growth, design and performance issues for nitride-based UV (< 400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys (InGaN, AlInGaN). The authors discuss the trade-off between the challenging growth of high Al containing alloys (AlGaN, AlGaInN), and the need for sufficient carrier confinement in UV heterostructures. Carrier leakage for various composition AlGaN barriers is examined through a calculation of the total unconfined carrier density in the ... continued below

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11 p.

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CRAWFORD,MARY H.; HAN,JUNG; CHOW,WENG W.; BANAS,MICHAEL ANTHONY; FIGIEL,JEFFREY J.; ZHANG,LEI et al. February 16, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

In this paper, the authors overview several of the critical materials growth, design and performance issues for nitride-based UV (< 400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys (InGaN, AlInGaN). The authors discuss the trade-off between the challenging growth of high Al containing alloys (AlGaN, AlGaInN), and the need for sufficient carrier confinement in UV heterostructures. Carrier leakage for various composition AlGaN barriers is examined through a calculation of the total unconfined carrier density in the quantum well system. They compare the performance of two distinct UV LED structures: GaN/AlGaN quantum well LEDs for {lambda}< 360 nm emission, and InGaN/AlGaInN quantum well LEDs for 370 nm <{lambda}< 390 nm emission.

Physical Description

11 p.

Notes

OSTI as DE00751258

Medium: P; Size: 11 pages

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  • SPIE's International Symposium on Optoelectronics 2000: Light-Emitting Diodes: Research, Manufacturing and Applications IV Conference, San Jose, CA (US), 01/22/2000--01/28/2000

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  • Report No.: SAND99-1869C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 751258
  • Archival Resource Key: ark:/67531/metadc707642

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  • February 16, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 6, 2017, 7:26 p.m.

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CRAWFORD,MARY H.; HAN,JUNG; CHOW,WENG W.; BANAS,MICHAEL ANTHONY; FIGIEL,JEFFREY J.; ZHANG,LEI et al. Design and performance of nitride-based UV LEDs, article, February 16, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc707642/: accessed October 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.