Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen

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Description

Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.

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12 p.

Creation Information

Kurtz, Steven R.; Allerman, Andrew A.; Seager, Carleton H.; Sieg, Robert M. & Jones, Eric D. May 3, 2000.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 16 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico
  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Livermore, CA (United States)
    Place of Publication: Livermore, California

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Description

Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.

Physical Description

12 p.

Notes

OSTI as DE00755593

Medium: P; Size: 12 pages

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  • Journal Name: Applied Physics Letters; Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND2000-1115J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1063/1.126989 | External Link
  • Office of Scientific & Technical Information Report Number: 755593
  • Archival Resource Key: ark:/67531/metadc707485

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 3, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 6, 2017, 8:22 p.m.

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Kurtz, Steven R.; Allerman, Andrew A.; Seager, Carleton H.; Sieg, Robert M. & Jones, Eric D. Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen, article, May 3, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc707485/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.