Focused ion beam damage to MOS integrated circuits

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Description

Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV ... continued below

Physical Description

6 p.

Creation Information

FLEETWOOD,D.M.; CAMPBELL,ANN N.; HEMBREE,CHARLES E.; TANGYUNYONG,PAIBOON; JESSING,JEFFREY R. & SODEN,JERRY M. May 10, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures of packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed.

Physical Description

6 p.

Notes

INIS; OSTI as DE00756102

Medium: P; Size: 6 pages

Source

  • IEEE Nuclear and Space Radiation Effects Conference, Reno, NV (US), 07/24/2000--07/28/2000

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  • Report No.: SAND2000-1163C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 756102
  • Archival Resource Key: ark:/67531/metadc707359

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Creation Date

  • May 10, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • April 11, 2017, 1:06 p.m.

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FLEETWOOD,D.M.; CAMPBELL,ANN N.; HEMBREE,CHARLES E.; TANGYUNYONG,PAIBOON; JESSING,JEFFREY R. & SODEN,JERRY M. Focused ion beam damage to MOS integrated circuits, article, May 10, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc707359/: accessed June 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.