Epitaxial Pb(Zr{sub 0.40}Ti{sub 0.60})O{sub 3}/SrRuO{sub 3} and PbTiO{sub 3}/SrRuO{sub 3} multilayer thin films prepared by MOCVD and rf sputtering

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Epitaxial SrRuO{sub 3} thin films were deposited by RF sputtering on SrTiO{sub 3} or MgO substrates for use as underlying electrodes. On these conductive substrates, epitaxial Pb(Zr{sub 0.35}Ti{sub 0.65})O{sub 3} (PZT) and PbTiO{sub 3} (PT) thin films were, deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), RBS channeling (RBS), transmission electron microscopy (TEM) and optical waveguiding were used to characterize phase, microstructure, defect structure, refractive index, and film thickness of the deposited films. The PZT and PT films were epitaxial and c-axis oriented. 90{degree} domains, interfacial misfit dislocations and dislocations and threading dislocations were the primary structural defects, ... continued below

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7 p.

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Foster, C.M.; Csencsits, R. & Baldo, P.M. December 1, 1994.

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Epitaxial SrRuO{sub 3} thin films were deposited by RF sputtering on SrTiO{sub 3} or MgO substrates for use as underlying electrodes. On these conductive substrates, epitaxial Pb(Zr{sub 0.35}Ti{sub 0.65})O{sub 3} (PZT) and PbTiO{sub 3} (PT) thin films were, deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), RBS channeling (RBS), transmission electron microscopy (TEM) and optical waveguiding were used to characterize phase, microstructure, defect structure, refractive index, and film thickness of the deposited films. The PZT and PT films were epitaxial and c-axis oriented. 90{degree} domains, interfacial misfit dislocations and dislocations and threading dislocations were the primary structural defects, and the films showed a 70% RBS channeling reduction. Hysteresis and dielectric measurements of epitaxial PZT ferroelectric capacitor structures formed using evaporated Ag or ITO glass top electrode showed: a remanent polarization of 46.2 mC/cm{sup 2}, a coercive field of 54.9 KV/cm, a dielectric constant of 410, a bipolar resistivity of {approximately}5.8 {times} 10{sup 9} {Omega}-cm at a field of 275 KV/cm, and a breakdown strength of >400 KV/cm.

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7 p.

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OSTI as DE95007146

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994

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  • Other: DE95007146
  • Report No.: ANL/MSD/CP--83373
  • Report No.: SAND--95-1145C;CONF-941144--148
  • Grant Number: W-31109-ENG-38;AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 71582
  • Archival Resource Key: ark:/67531/metadc707147

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  • December 1, 1994

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  • Sept. 12, 2015, 6:31 a.m.

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  • Dec. 16, 2015, 5:04 p.m.

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Foster, C.M.; Csencsits, R. & Baldo, P.M. Epitaxial Pb(Zr{sub 0.40}Ti{sub 0.60})O{sub 3}/SrRuO{sub 3} and PbTiO{sub 3}/SrRuO{sub 3} multilayer thin films prepared by MOCVD and rf sputtering, article, December 1, 1994; Illinois. (digital.library.unt.edu/ark:/67531/metadc707147/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.