Cu interactions with {alpha}-Al{sub 2}O{sub 3}(0001): Effects of surface hydroxyl groups vs. dehydroxylation by Ar ion sputtering

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XPS studies and first principles calculations compare Cu adsorption on heavily hydroxylated sapphire (0001) with a dehydroxylated surface produced by Ar{sup +} sputtering followed by annealing in O{sub 2}. Annealing a cleaned sapphire sample with an O{sub 2} partial pressure of {approximately}5 x 10{sup {minus}6} Torr removes most contaminants, but leaves a surface with {approximately}0.4ML carbon and {approximately}0.4ML OH. Subsequent light (6 min.) Ar ion sputtering at 1 KeV reduces the carbon to undetectable levels but does not dehydroxylate the surface. Further sputtering at higher Ar ion excitation energies (>2 KeV) partially dehydroxylates the surface, while 5 KeV Ar ion ... continued below

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29 p.

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NIU,C.; SHEPHERD,K.; MARTINI,D.; KELBER,J.A.; JENNISON,DWIGHT R. & BOGICEVIC,ALEXANDER February 8, 2000.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

XPS studies and first principles calculations compare Cu adsorption on heavily hydroxylated sapphire (0001) with a dehydroxylated surface produced by Ar{sup +} sputtering followed by annealing in O{sub 2}. Annealing a cleaned sapphire sample with an O{sub 2} partial pressure of {approximately}5 x 10{sup {minus}6} Torr removes most contaminants, but leaves a surface with {approximately}0.4ML carbon and {approximately}0.4ML OH. Subsequent light (6 min.) Ar ion sputtering at 1 KeV reduces the carbon to undetectable levels but does not dehydroxylate the surface. Further sputtering at higher Ar ion excitation energies (>2 KeV) partially dehydroxylates the surface, while 5 KeV Ar ion sputtering creates oxygen vacancies in the surface region. Further annealing in O{sub 2} repairs the oxygen vacancies in the top layers but those beneath the surface remain. Deposition of Cu on the hydroxylated surface at 300 K results in a maximum Cu(I) coverage of {approximately}0.35 ML, in agreement with theoretical predictions.

Physical Description

29 p.

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OSTI as DE00751241

Medium: P; Size: 29 pages

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  • Journal Name: Surface Science; Other Information: Submitted to Surface Science

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  • Report No.: SAND2000-0374J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 751241
  • Archival Resource Key: ark:/67531/metadc707039

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  • February 8, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 7:06 p.m.

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NIU,C.; SHEPHERD,K.; MARTINI,D.; KELBER,J.A.; JENNISON,DWIGHT R. & BOGICEVIC,ALEXANDER. Cu interactions with {alpha}-Al{sub 2}O{sub 3}(0001): Effects of surface hydroxyl groups vs. dehydroxylation by Ar ion sputtering, article, February 8, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc707039/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.