AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

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The authors demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub c} and negligible {triangle}E{sub v}, this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (E{sub g}=1.20eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, which ... continued below

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13 p.

Creation Information

Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R. et al. January 4, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

The authors demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub c} and negligible {triangle}E{sub v}, this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (E{sub g}=1.20eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs.

Physical Description

13 p.

Notes

OSTI as DE00750189

Medium: P; Size: 13 pages

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  • Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND2000-0060J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 750189
  • Archival Resource Key: ark:/67531/metadc706927

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  • January 4, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 7, 2017, 1 p.m.

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Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R. et al. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor, article, January 4, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc706927/: accessed September 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.