Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

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In today's commercially available counter-select-grade CdZnTe crystals for radiation detector applications, the thermal ionization energies of the traps and their types, whether electron or hole traps, were measured. The measurements were successfully done using thermoelectric emission spectroscopy (TEES) and thermally stimulated conductivity (TSC). For reliability, the electrical contacts to the sample were found to be very important and, instead of Au Schottky contacts, In Ohmic contacts had to be used. For the filling of the traps, photoexcitation was done at zero bias, at 20K and at wavelengths which gave the maximum bulk photoexcitation for the sample. Between the temperature range ... continued below

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29 p.

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James, Ralph B. January 7, 2000.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 11 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

In today's commercially available counter-select-grade CdZnTe crystals for radiation detector applications, the thermal ionization energies of the traps and their types, whether electron or hole traps, were measured. The measurements were successfully done using thermoelectric emission spectroscopy (TEES) and thermally stimulated conductivity (TSC). For reliability, the electrical contacts to the sample were found to be very important and, instead of Au Schottky contacts, In Ohmic contacts had to be used. For the filling of the traps, photoexcitation was done at zero bias, at 20K and at wavelengths which gave the maximum bulk photoexcitation for the sample. Between the temperature range from 20 to 400 K, the TSC current was found to be on the order of {approximately} 10,000 times or even larger than the TEES current, in agreement with theory, but only TEES could resolve the trap type and was sensitive to the deep traps. Large concentration of hole traps at 0.1 and 0.6 eV were observed and smaller contraction of electron traps at 0.4 eV was seen. These deep traps cause compensation in the material and also cause trapping that degrades the radiation detection measurement.

Physical Description

29 p.

Notes

INIS; OSTI as DE00755817

Medium: P; Size: 29 pages

Source

  • 1998 Workshop on the Physics and Chemistry of II-VI Semiconductors, Charleston, SC (US), 10/20/1998

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  • Report No.: SAND2000-8523C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 755817
  • Archival Resource Key: ark:/67531/metadc706457

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • January 7, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 7:06 p.m.

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James, Ralph B. Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements, article, January 7, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc706457/: accessed November 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.