Enhancement of surface processes with low energy ions

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Continuing trends in device fabrication towards smaller feature sizes, lower thermal budgets and advanced device structures put greater emphasis on controlling the surface structure and reactivity during processing. Since the evolution of the semiconductor surface during processing is determined by the interaction of multiple surface processes, understanding how to control and modify these processes on the atomic level would enable us to exert greater control over the resulting morphology and composition. Low energy ions represent one method for bringing controlled amounts of energy to the surface to modify surface structure and kinetics. The kinetic energy deposited by the ions can ... continued below

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17 p.

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Chason, E. May 1, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Continuing trends in device fabrication towards smaller feature sizes, lower thermal budgets and advanced device structures put greater emphasis on controlling the surface structure and reactivity during processing. Since the evolution of the semiconductor surface during processing is determined by the interaction of multiple surface processes, understanding how to control and modify these processes on the atomic level would enable us to exert greater control over the resulting morphology and composition. Low energy ions represent one method for bringing controlled amounts of energy to the surface to modify surface structure and kinetics. The kinetic energy deposited by the ions can break bonds and displace atoms, creating defect populations significantly in excess of the equilibrium concentration. Consequences of these non-equilibrium conditions include the enhancement of surface kinetic processes, increased surface reactivity and formation of metastable structures and compositions. These effects can be beneficial (ion enhanced mass transport can lead to surface smoothing) or they can be detrimental (residual defects can degrade electrical properties or lead to amorphization). The net results depend on a complex balance that depends on many parameters including ion mass, energy, flux and temperature. In the following section, we review progress both in our fundamental understanding of the production of low-energy ion-induced defects and in the use of low energy ions to enhance surface morphology, stimulate low temperature growth and obtain non-equilibrium structures and compositions.

Physical Description

17 p.

Notes

OSTI as DE95011605

Source

  • DOE Council on Materials conference on new directions for ion beams in semiconductor processing, Santa Fe, NM (United States), 4-7 May 1995

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  • Other: DE95011605
  • Report No.: SAND--95-0979C
  • Report No.: CONF-9505211--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 74159
  • Archival Resource Key: ark:/67531/metadc706400

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  • May 1, 1995

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 14, 2016, 3:46 p.m.

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Chason, E. Enhancement of surface processes with low energy ions, article, May 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc706400/: accessed August 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.