MOCVD growth and characterization of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} thin films for high frequency devices

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The authors have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} (BST) thin films. The BST thin films were deposited at 650 C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350 C through a shadow mask using electron beam ... continued below

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9 p.

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Baumann, P. K.; Streiffer, S. K.; Im, J.; Baldo, P.; McCormick, A.; Auciello, O. et al. January 18, 2000.

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The authors have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} (BST) thin films. The BST thin films were deposited at 650 C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350 C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700 C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

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9 p.

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OSTI as DE00751872

Medium: P; Size: 9 pages

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  • MRS '99 Fall Meeting, Boston, MA (US), 11/29/1999--12/03/1999

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  • Report No.: ANL/MSD/CP-100847
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 751872
  • Archival Resource Key: ark:/67531/metadc706247

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  • January 18, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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Baumann, P. K.; Streiffer, S. K.; Im, J.; Baldo, P.; McCormick, A.; Auciello, O. et al. MOCVD growth and characterization of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} thin films for high frequency devices, article, January 18, 2000; Illinois. (digital.library.unt.edu/ark:/67531/metadc706247/: accessed October 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.