InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

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The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by ... continued below

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13 p.

Creation Information

Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R. & Hou, H.Q. January 10, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

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13 p.

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OSTI as DE00750200

Medium: P; Size: 13 pages

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  • Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND2000-0093J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 750200
  • Archival Resource Key: ark:/67531/metadc706231

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • January 10, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 7, 2017, 1:14 p.m.

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Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R. & Hou, H.Q. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor, article, January 10, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc706231/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.