Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition

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Description

The authors report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb emitters using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multi-stage, type 1, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in a horizontal reactor. Broadband LED`s produced ... continued below

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23 p.

Creation Information

Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R. & Baucom, K.C. August 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb emitters using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multi-stage, type 1, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in a horizontal reactor. Broadband LED`s produced 2 mW average power at 3.7 {micro}m and 80 K and 0.1 mW at 4.3 {micro}m and 300 K. a multi-stage, 3.8--3.9 {micro}m laser structure operated up to T = 180 K. At 80 K, peak-power > 100 mW/facet and a high slope efficiency (48%) were observed in these gain guided lasers.

Physical Description

23 p.

Notes

OSTI as DE98007119

Source

  • 9. international conference of metal organic vapor phase epitaxy, La Jolla, CA (United States), 30 May - 4 Jun 1998

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  • Other: DE98007119
  • Report No.: SAND--98-0112C
  • Report No.: CONF-980576--
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/661741 | External Link
  • Office of Scientific & Technical Information Report Number: 661741
  • Archival Resource Key: ark:/67531/metadc706178

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Creation Date

  • August 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 13, 2016, 5:43 p.m.

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Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R. & Baucom, K.C. Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition, report, August 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc706178/: accessed December 14, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.