Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors Page: 6 of 7
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4. CONCLUSION
The EP and AP deposition processes are low-cost
technologies. The device fabricated using EP precursor
layers resulted in total-area conversion efficiencies up to
15.4%. The quality of CIGS-based films and devices
prepared from EP and AP precursors is very promising.
We are optimizing the processing conditions to eliminate
or minimize the PVD stage.
Table I: Trap concentration and activation energy of each
trap measured by DLTS.Devices Trap Level
PVD E1
H1Energy Level Trap Concentration
(eV) (cm-3)E,-0.1
E~+0.26EP-15.4% E1 E,-0.09
H1
EP-13.4% E1
H1
AP-12.4% E1E~+0.27
E,-0.09
E~+0.262.1x1014
2.7x1014
8.4x1014
1.2x1013
1.2x1015
1.5x1014Not resolved 6.6x1014
-
Cr
F1
H
0-2
80 120 160 200 240 280 320 360
Temperature (K)
Figure 10: DLTS spectra of nt-p CIGS devices at a bias
voltage of -0.8 V to +0.2 V (forward bias mode).REFERENCES
H1 E~+0.26
E2 E,-0.8310
zi
z10
02
03 04 05
3.2x1014
2.1x10 140.6 07 06
09
Depth (pm)
Figure 9: The net carrier concentration vs. depth for the
devices measured by C-V.
Table 2: Parameters of the devices prepared from EP-
precursors, AP-precursors, and also from PVD device.
Device V. (V) I(mA/cm ) FF(%) Efficiency(%)
----------------------------------------
PVD 0.679 35.00 77.75 18.5
EP-15.4% 0.666 30.51 75.6 15.4
AP-13.4% 0.686 29.29 66.87 13.4
AP-12.4% 0.565 33.27 66.1 12.4[1] H. S. Ullal, K. Zweibel, and B. VonRoedern,
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[2] R. N. Bhattacharya, W. Batchelor, J. F. Hiltner, and J.
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Hasoon, J. E. Granata, K. Ramanathan, J. Alleman, J.
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Electrochem. Society 145 (1998) 3435.
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222.
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Hiltner, A. Swartzlander, F. Hasoon, and R. Noufi,
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Appl. Phys. 83 (1998) 318.ACKNOWLEDGEMENTS
We would like to thank James Keane, Amy
Swartzlander, Rick Matson, Jeff Alleman, and James
Dolan for their valuable contributions to this research.
This work was supported by Davis, Joseph & Negley
(California Corporation, Work-for-Others Contract No.
1326). It was also supported by the U. S. Department of
Energy under Contract No. DE-AC36-99-G010337.4
E2
E1 (12.4%)
(1.4%)
H1 EP
(15.4%)
EP (134% device)
o AP (124% device) (18.5/)
t EP (15 4% device)
SPVD (18.5% device) H2o AP (12 4% device)
. AP (13.4% device)
t EP (15 4% device) (185%)
PVD (18.5% device)
AP 4-iA
(12.4%)
& AP
Ooo oOc +dt t e (13.4%)
SC6 o00o 4 o Q
C
" . . .
15
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Bhattacharya, R. N.; Balcioglu, A.; Ramanathan, K. & Batchelor, W. K., Ahrenkiel, R. K. Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors, article, May 22, 2000; Golden, Colorado. (https://digital.library.unt.edu/ark:/67531/metadc706115/m1/6/: accessed April 19, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.