High-Density Plasma-Induced Etch Damage of GaN

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Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias andlor high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the ... continued below

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Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J. et al. April 29, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias andlor high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN.

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10 Pages

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  • Materials Research Society; San Francisco, CA; 05/04-09/1999

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  • Other: DE00007208
  • Report No.: SAND99-1080C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 7208
  • Archival Resource Key: ark:/67531/metadc706101

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • April 29, 1999

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • Dec. 9, 2016, 9:27 p.m.

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Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J. et al. High-Density Plasma-Induced Etch Damage of GaN, article, April 29, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc706101/: accessed June 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.