Optical properties of spontaneous lateral composition modulations in AlAs/InAs short-period superlattices

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The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of a AlAs/InAs short-period superlattice, on the electronic band structure is investigated using photo-transmission and photoluminescence spectroscopy. Compared with uniform layers of similar average composition, the presence of the composition modulation considerably reduces the band gap energy and produces strongly polarized emission and absorption spectra. The authors demonstrate that the dominant polarization can selectively be aligned along the [{bar 1}10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward [111]A or [101] resulted in modulation directions along [110] or [100], ... continued below

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11 p.

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FRANCOEUR,S.; ALSINA,F.; ZHANG,YONG; NORMAN,A.G.; MASCARENHAS,A.; JONES,ERIC D. et al. May 11, 2000.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 24 times , with 5 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of a AlAs/InAs short-period superlattice, on the electronic band structure is investigated using photo-transmission and photoluminescence spectroscopy. Compared with uniform layers of similar average composition, the presence of the composition modulation considerably reduces the band gap energy and produces strongly polarized emission and absorption spectra. The authors demonstrate that the dominant polarization can selectively be aligned along the [{bar 1}10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward [111]A or [101] resulted in modulation directions along [110] or [100], respectively, and dominant polarizations along a direction orthogonal to the respective composition modulation. Band gap reduction as high as 350 meV and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Polarization ratios up to 26 are observed in transmission spectra.

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11 p.

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OSTI as DE00755604

Medium: P; Size: 11 pages

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  • Journal Name: Applied Physics Letters; Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND2000-1197J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1063/1.1311598 | External Link
  • Office of Scientific & Technical Information Report Number: 755604
  • Archival Resource Key: ark:/67531/metadc705987

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  • May 11, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 6, 2017, 7:32 p.m.

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FRANCOEUR,S.; ALSINA,F.; ZHANG,YONG; NORMAN,A.G.; MASCARENHAS,A.; JONES,ERIC D. et al. Optical properties of spontaneous lateral composition modulations in AlAs/InAs short-period superlattices, article, May 11, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc705987/: accessed September 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.