Single-event upset and snapback in silicon-on-insulator devices

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Description

SEU is studied in SOI transistors and circuits with various body tie structures. The importance of impact ionization effects, including single-event snapback, is explored. Implications for hardness assurance testing of SOI integrated circuits are discussed.

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4 p.

Creation Information

DODD,PAUL E.; SHANEYFELT,MARTY R.; SCHWANK,JAMES R.; HASH,GERALD L.; DRAPER,BRUCE L. & WINOKUR,PETER S. February 23, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

SEU is studied in SOI transistors and circuits with various body tie structures. The importance of impact ionization effects, including single-event snapback, is explored. Implications for hardness assurance testing of SOI integrated circuits are discussed.

Physical Description

4 p.

Notes

INIS; OSTI as DE00751467

Medium: P; Size: 4 pages

Source

  • 2000 IEEE Nuclear and Space Radiation Effects Conference, Reno, NV (US), 07/24/2000--07/28/2000

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  • Report No.: SAND2000-0490C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 751467
  • Archival Resource Key: ark:/67531/metadc705797

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Office of Scientific & Technical Information Technical Reports

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Creation Date

  • February 23, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 8:30 p.m.

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DODD,PAUL E.; SHANEYFELT,MARTY R.; SCHWANK,JAMES R.; HASH,GERALD L.; DRAPER,BRUCE L. & WINOKUR,PETER S. Single-event upset and snapback in silicon-on-insulator devices, article, February 23, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc705797/: accessed October 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.