MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching

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Description

Certain applications for pulse power require narrow, high current pulses for their implementation. This work was performed to determine if MCTS (MOS Controlled Thyristors) could be used for these applications. The MCTS were tested as discharge switches in a low inductance circuit delivering 1 {micro}s pulses at currents between roughly 3 kA and 11 kA, single shot and repetitively at 1, 10 and 50 Hz. Although up to 9000 switching events could be obtained, all the devices failed at some combination of current and repetition rate. Failure was attributed to temperature increases caused by average power dissipated in the thyristor ... continued below

Physical Description

19 p.

Creation Information

BAYNE,S.B.; PORTNOY,W.M.; ROHWEIN,G.J. & HEFNER,A.R. January 13, 2000.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 11 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Certain applications for pulse power require narrow, high current pulses for their implementation. This work was performed to determine if MCTS (MOS Controlled Thyristors) could be used for these applications. The MCTS were tested as discharge switches in a low inductance circuit delivering 1 {micro}s pulses at currents between roughly 3 kA and 11 kA, single shot and repetitively at 1, 10 and 50 Hz. Although up to 9000 switching events could be obtained, all the devices failed at some combination of current and repetition rate. Failure was attributed to temperature increases caused by average power dissipated in the thyristor during the switching sequence. A simulation was performed to confirm that the temperature rise was sufficient to account for failure. Considerable heat sinking, and perhaps a better thermal package, would be required before the MCT could be considered for pulse power applications.

Physical Description

19 p.

Notes

OSTI as DE00750307

Medium: P; Size: 19 pages

Source

  • Journal Name: IEEE Transactions on Power Electronics; Other Information: Submitted to IEEE Transactions on Power Electronics

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  • Report No.: SAND2000-0129J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 750307
  • Archival Resource Key: ark:/67531/metadc705773

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  • January 13, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 7, 2017, 6:52 p.m.

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BAYNE,S.B.; PORTNOY,W.M.; ROHWEIN,G.J. & HEFNER,A.R. MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching, article, January 13, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc705773/: accessed September 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.