Epitaxially-Grown GaN Junction Field Effect Transistors

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Description

Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (g<sub>m</sub>) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 &micro; m gate JFET device at V<sub>GS</sub>= 1 V and V<sub>DS</sub>=15 V. The intrinsic transconductance, calculated from the measured g<sub>m</sub> and the source series ... continued below

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20 Pages

Creation Information

Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J. et al. May 19, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (g<sub>m</sub>) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 &micro; m gate JFET device at V<sub>GS</sub>= 1 V and V<sub>DS</sub>=15 V. The intrinsic transconductance, calculated from the measured g<sub>m</sub> and the source series resistance, is 81 mS/mm. The f<sub>T</sub> and f<sub>max</sub> for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

Physical Description

20 Pages

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  • Journal Name: IEEE Transaction on Electron Devices

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  • Other: DE00007044
  • Report No.: SAND99-1252J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 7044
  • Archival Resource Key: ark:/67531/metadc705770

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • May 19, 1999

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • Dec. 7, 2016, 11:11 a.m.

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Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J. et al. Epitaxially-Grown GaN Junction Field Effect Transistors, article, May 19, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc705770/: accessed April 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.