Diffusional kinetics of SiGe Dimers on Si(100) using atom-tracking scanning tunneling microscopy

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Quantitative measurements of the diffusion of adsorbed mixed Ge-Si dimers on the Si(100) surface have been made as a function of temperature using atom-tracking scanning tunneling microscopy. These mixed dimers are distinguishable from pure Si-Si dimers by their characteristic kinetics--a 180-degree rotation between two highly buckled configurations. At temperatures at which the mixed dimers diffuse, atomic-exchange events occur, in which the Ge atom in the adsorbed dimer exchanges with a substrate Si atom. Re-exchange can also occur when the diffusing Si-Si dimer revisits the original site of exchange.

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14 p.

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QIN,X.R.; SWARTZENTRUBER,BRIAN S. & LAGALLY,M.G. June 14, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Quantitative measurements of the diffusion of adsorbed mixed Ge-Si dimers on the Si(100) surface have been made as a function of temperature using atom-tracking scanning tunneling microscopy. These mixed dimers are distinguishable from pure Si-Si dimers by their characteristic kinetics--a 180-degree rotation between two highly buckled configurations. At temperatures at which the mixed dimers diffuse, atomic-exchange events occur, in which the Ge atom in the adsorbed dimer exchanges with a substrate Si atom. Re-exchange can also occur when the diffusing Si-Si dimer revisits the original site of exchange.

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14 p.

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OSTI as DE00759871

Medium: P; Size: 14 pages

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  • Journal Name: Physical Review Letters; Other Information: Submitted to Physical Review Letters

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  • Report No.: SAND2000-1510J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1103/PhysRevLett.85.3660 | External Link
  • Office of Scientific & Technical Information Report Number: 759871
  • Archival Resource Key: ark:/67531/metadc705624

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  • June 14, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 7, 2017, 2:07 p.m.

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QIN,X.R.; SWARTZENTRUBER,BRIAN S. & LAGALLY,M.G. Diffusional kinetics of SiGe Dimers on Si(100) using atom-tracking scanning tunneling microscopy, article, June 14, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc705624/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.