Photoconductive properties of GaAs{sub 1{minus}x}N{sub x} double heterostructures as a function of excitation wavelength

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The ternary semiconductor GaAs{sub 1{minus}x}N{sub x} with 0 < x < 0.3 can be grown epitaxially on GaAs and has a very large bowing coefficient. The alloy bandgap can be reduced to about 1.0 eV with about a 3% nitrogen addition. In this work, the authors measured the internal spectral response and recombination lifetime of a number of alloys using the ultra-high frequency photoconductive decay (UHFPCD) method. The data shows that the photoconductive excitation spectra of the GaAs{sub 0.97}N{sub 0.03} alloy shows a gradual increase in response through the absorption edge near E{sub g}. This contrasts with most direct bandgap ... continued below

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Ahrenkiel, R. K.; Mascarenhas, A.; Johnston, S. W.; Zhang, Y.; Friedman, D. J. & Vernon, S. M. May 22, 2000.

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The ternary semiconductor GaAs{sub 1{minus}x}N{sub x} with 0 < x < 0.3 can be grown epitaxially on GaAs and has a very large bowing coefficient. The alloy bandgap can be reduced to about 1.0 eV with about a 3% nitrogen addition. In this work, the authors measured the internal spectral response and recombination lifetime of a number of alloys using the ultra-high frequency photoconductive decay (UHFPCD) method. The data shows that the photoconductive excitation spectra of the GaAs{sub 0.97}N{sub 0.03} alloy shows a gradual increase in response through the absorption edge near E{sub g}. This contrasts with most direct bandgap semiconductors that show a steep onset of photoresponse at E{sub g}. The recombination lifetimes frequently are much longer than expected from radiative recombination and often exceeded 1.0{mu}s. The data were analyzed in terms of a band model that includes large potential fluctuations in the conduction band due to the random distribution of nitrogen atoms in the alloy.

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  • Materials Research Society's 1999 Fall Meeting, Boston. MA (US), 11/29/1999--12/03/1999

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  • Report No.: NREL/CP-520-27634
  • Grant Number: AC36-99GO10337
  • Office of Scientific & Technical Information Report Number: 756333
  • Archival Resource Key: ark:/67531/metadc704810

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  • May 22, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 31, 2016, 3:21 p.m.

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Ahrenkiel, R. K.; Mascarenhas, A.; Johnston, S. W.; Zhang, Y.; Friedman, D. J. & Vernon, S. M. Photoconductive properties of GaAs{sub 1{minus}x}N{sub x} double heterostructures as a function of excitation wavelength, article, May 22, 2000; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc704810/: accessed September 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.