Segregation gettering by implantation-formed cavities and B-Si precipitates in silicon

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Description

The authors show that Fe, Co, Cu, and Au in Si undergo strong segregation gettering to cavities and B-Si precipitates formed by He or B ion implantation and annealing. The respective mechanisms are argued to be chemisorption on the cavity walls and occupation of solution sites within the disordered, B-rich, B-Si phase. The strengths of the reactions are evaluated, enabling prediction of gettering performance.

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14 p.

Creation Information

Myers, S.M.; Petersen, G.A. & Follstaedt, D.M. January 1, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors show that Fe, Co, Cu, and Au in Si undergo strong segregation gettering to cavities and B-Si precipitates formed by He or B ion implantation and annealing. The respective mechanisms are argued to be chemisorption on the cavity walls and occupation of solution sites within the disordered, B-rich, B-Si phase. The strengths of the reactions are evaluated, enabling prediction of gettering performance.

Physical Description

14 p.

Notes

INIS; OSTI as DE98004109

Source

  • 8. international symposium on silicon materials science and technology, San Diego, CA (United States), 3-8 May 1998

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  • Other: DE98004109
  • Report No.: SAND--97-1936C
  • Report No.: CONF-980528--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 650275
  • Archival Resource Key: ark:/67531/metadc704779

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Creation Date

  • January 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 14, 2016, 8:07 p.m.

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Myers, S.M.; Petersen, G.A. & Follstaedt, D.M. Segregation gettering by implantation-formed cavities and B-Si precipitates in silicon, article, January 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc704779/: accessed August 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.