New deposition processes for the growth of oxide and nitride thin films

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Description

This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe{sub 2}]{sub 4} with oxygen. The data demonstrated that gas-phase insertion of ... continued below

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12 pages

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Apen, E.A.; Atagi, L.M.; Barbero, R.S.; Espinoza, B.F.; Hubbard, K.M.; Salazar, K.V. et al. November 1, 1998.

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Description

This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe{sub 2}]{sub 4} with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr{sub 3}N{sub 4}, and the thermal CVD of GaN and Al N. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors.

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12 pages

Notes

INIS; OSTI as DE00676883

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  • Other Information: Supercedes report DE99000838; PBD: [1998]

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  • Other: DE99000838
  • Report No.: LA-UR--98-1834
  • Grant Number: W-7405-ENG-36
  • DOI: 10.2172/676883 | External Link
  • Office of Scientific & Technical Information Report Number: 676883
  • Archival Resource Key: ark:/67531/metadc704655

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Office of Scientific & Technical Information Technical Reports

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  • November 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • May 5, 2016, 7:38 p.m.

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Apen, E.A.; Atagi, L.M.; Barbero, R.S.; Espinoza, B.F.; Hubbard, K.M.; Salazar, K.V. et al. New deposition processes for the growth of oxide and nitride thin films, report, November 1, 1998; New Mexico. (digital.library.unt.edu/ark:/67531/metadc704655/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.