Chemical kinetics models for semiconductor processing

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Description

Chemical reactions in the gas-phase and on surfaces are important in the deposition and etching of materials for microelectronic applications. A general software framework for describing homogeneous and heterogeneous reaction kinetics utilizing the Chemkin suite of codes is presented. Experimental, theoretical and modeling approaches to developing chemical reaction mechanisms are discussed. A number of TCAD application modules for simulating the chemically reacting flow in deposition and etching reactors have been developed and are also described.

Physical Description

12 p.

Creation Information

Coltrin, M.E.; Creighton, J.R.; Meeks, E.; Grcar, J.F.; Houf, W.G. & Kee, R.J. December 31, 1997.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Chemical reactions in the gas-phase and on surfaces are important in the deposition and etching of materials for microelectronic applications. A general software framework for describing homogeneous and heterogeneous reaction kinetics utilizing the Chemkin suite of codes is presented. Experimental, theoretical and modeling approaches to developing chemical reaction mechanisms are discussed. A number of TCAD application modules for simulating the chemically reacting flow in deposition and etching reactors have been developed and are also described.

Physical Description

12 p.

Notes

OSTI as DE98002574

Source

  • 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997

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  • Other: DE98002574
  • Report No.: SAND--97-1828C
  • Report No.: CONF-971201--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 663558
  • Archival Resource Key: ark:/67531/metadc704649

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Creation Date

  • December 31, 1997

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 14, 2016, 7:28 p.m.

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Coltrin, M.E.; Creighton, J.R.; Meeks, E.; Grcar, J.F.; Houf, W.G. & Kee, R.J. Chemical kinetics models for semiconductor processing, article, December 31, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc704649/: accessed August 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.