SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition

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In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respect to EPMA data for germanium and NRA data for hydrogen.

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Reedy, R. C.; Mason, A. R.; Nelson, B. P. & Xu, Y. October 16, 1998.

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Description

In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respect to EPMA data for germanium and NRA data for hydrogen.

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OSTI as DE00006602

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  • Presented at the National Center for Photovoltaics Program Review Meeting, Denver, CO (US), 09/08/1998--09/11/1998

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  • Other: DE00006602
  • Report No.: NREL/CP-520-25629
  • Grant Number: AC36-83CH10093
  • Office of Scientific & Technical Information Report Number: 6602
  • Archival Resource Key: ark:/67531/metadc704477

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  • October 16, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 31, 2016, 7:12 p.m.

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Reedy, R. C.; Mason, A. R.; Nelson, B. P. & Xu, Y. SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition, article, October 16, 1998; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc704477/: accessed August 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.