Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching

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Deep-reactive ion etching (DRIE) of silicon, also known as high-aspect-ratio silicon etching (HARSE), is distinguished by fast etch rates ({approximately}3 {micro}m/min), crystal orientation independence, anisotropy, vertical sidewall profiles and CMOS compatibility. By using through-wafer HARSE and stopping on a dielectric film placed on the opposite side of the wafer, freestanding dielectric membranes were produced. Dielectric membrane-based sensors and actuators fabricated in this way include microhotplates, flow sensors, valves and magnetically-actuated flexural plate wave (FPW) devices. Unfortunately, low-stress silicon nitride, a common membrane material, has an appreciable DRI etch rate. To overcome this problem HARSE can be followed by a brief ... continued below

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8 p.

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Manginell, R.P.; Frye-Mason, G.C.; Schubert, W.K.; Shul, R.J. & Willison, C.G. August 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Deep-reactive ion etching (DRIE) of silicon, also known as high-aspect-ratio silicon etching (HARSE), is distinguished by fast etch rates ({approximately}3 {micro}m/min), crystal orientation independence, anisotropy, vertical sidewall profiles and CMOS compatibility. By using through-wafer HARSE and stopping on a dielectric film placed on the opposite side of the wafer, freestanding dielectric membranes were produced. Dielectric membrane-based sensors and actuators fabricated in this way include microhotplates, flow sensors, valves and magnetically-actuated flexural plate wave (FPW) devices. Unfortunately, low-stress silicon nitride, a common membrane material, has an appreciable DRI etch rate. To overcome this problem HARSE can be followed by a brief wet chemical etch. This approach has been demonstrated using KOH or HF/Nitric/Acetic etchants, both of which have significantly smaller etch rates on silicon nitride than does DRIE. Composite membranes consisting of silicon dioxide and silicon nitride layers are also under evaluation due to the higher DRIE selectivity to silicon dioxide.

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8 p.

Notes

OSTI as DE98007249

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  • Micromachining and microfabrication symposium, Santa Clara, CA (United States), 21-22 Sep 1998

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  • Other: DE98007249
  • Report No.: SAND--98-1777C
  • Report No.: CONF-980918--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 663236
  • Archival Resource Key: ark:/67531/metadc704359

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  • August 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • May 5, 2016, 8:08 p.m.

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Manginell, R.P.; Frye-Mason, G.C.; Schubert, W.K.; Shul, R.J. & Willison, C.G. Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching, article, August 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc704359/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.