Characterization of electrical resistivity as a function of temperature in the Mo-Si-B system

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Measurements of electrical resistivity as a function of temperature from 25 to 1,500 C were conducted on polycrystalline samples in the Mo-Si-B system. Single phase, or nearly single phase, samples were prepared for the following phases: Mo{sub 3}Si, Mo{sub 5}SiB{sub 2}, Mo{sub 5}Si{sub 3}B{sub x}, MoB, MoSi{sub 2}, and Mo{sub 5}Si{sub 3}. Thesis materials all exhibit resistivity values within a narrow range(4--22 x 10{sup {minus}7}{Omega}-m), and the low magnitude suggests these materials are semi-metals or low density of states metals. With the exception of MoSi{sub 2}, all single phase materials in this study were also found to have low temperature ... continued below

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Medium: P; Size: 62 pages

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Beckman, Sarah E. December 10, 1999.

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This thesis or dissertation is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 13 times . More information about this document can be viewed below.

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  • Ames Laboratory
    Publisher Info: Ames Lab., IA (United States)
    Place of Publication: Iowa

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Measurements of electrical resistivity as a function of temperature from 25 to 1,500 C were conducted on polycrystalline samples in the Mo-Si-B system. Single phase, or nearly single phase, samples were prepared for the following phases: Mo{sub 3}Si, Mo{sub 5}SiB{sub 2}, Mo{sub 5}Si{sub 3}B{sub x}, MoB, MoSi{sub 2}, and Mo{sub 5}Si{sub 3}. Thesis materials all exhibit resistivity values within a narrow range(4--22 x 10{sup {minus}7}{Omega}-m), and the low magnitude suggests these materials are semi-metals or low density of states metals. With the exception of MoSi{sub 2}, all single phase materials in this study were also found to have low temperature coefficient of resistivity(TCR) values. These values ranged from 2.10 x 10{sup {minus}10} to 4.74 x 10{sup {minus}10}{Omega}-m/{degree} C, and MoSi{sub 2} had a TCR of 13.77 x 10{sup {minus}10}{Omega}-m/{degree} C. The results from the single phase sample measurements were employed in a natural log rule-of-mixtures model to relate the individual phase resistivity values to those of multiphase composites. Three Mo-Si-B phase regions were analyzed: the binary Mo{sub 5}Si{sub 3}-MoSi{sub 2} system, the ternary phase field Mo{sub 5}Si{sub 3}B{sub x}MoB-MoSi{sub 2}, and the Mo{sub 3}Si-Mo{sub 5}SiB{sub 2}-Mo{sub 5} Si{sub 3}B{sub x} ternary region. The experimental data for samples in each of these regions agreed with the natural log model and illustrated that this model can predict the electrical resistivity as a function of temperature of multi-phase, sintered samples within an error of one standard deviation.

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Medium: P; Size: 62 pages

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INIS; OSTI as DE00754786

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  • Other Information: TH: Thesis (M.S.); Submitted to Iowa State Univ., Ames, IA (US)

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  • Report No.: IS-T-1889
  • Grant Number: W-7405-ENG-82
  • Office of Scientific & Technical Information Report Number: 754786
  • Archival Resource Key: ark:/67531/metadc704314

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  • December 10, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 29, 2016, 4:12 p.m.

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Beckman, Sarah E. Characterization of electrical resistivity as a function of temperature in the Mo-Si-B system, thesis or dissertation, December 10, 1999; Iowa. (digital.library.unt.edu/ark:/67531/metadc704314/: accessed August 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.