Microfabrication of membrane-based devices by deep-reactive ion etching (DRIE) of silicon

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Deep reactive ion etching (DRIE) of silicon was utilized to fabricate dielectric membrane-based devices such as microhotplates, valves and flexural plate wave (FPW) devices. Through-wafer DRIE is characterized by fast etch rates ({approximately} 3 {micro}m/min), crystal orientation independence, vertical sidewall profiles and CMOS compatibility. Low-stress silicon nitride, a popular membrane material, has an appreciable DRIE etch rate. To overcome this limitations DRIE can be accompanied by a brief wet chemical etch. This approach has been demonstrated using KOH or HF/Nitric/Acetic etchants, both of which have significantly lower etch rates on silicon nitride than does DRIE. The DRIE etch properties of ... continued below

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8 p.

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Manginell, R.P.; Frye-Mason, G.C.; Schubert, W.K.; Shul, R.J. & Willison, C.G. August 1, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 104 times , with 9 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Deep reactive ion etching (DRIE) of silicon was utilized to fabricate dielectric membrane-based devices such as microhotplates, valves and flexural plate wave (FPW) devices. Through-wafer DRIE is characterized by fast etch rates ({approximately} 3 {micro}m/min), crystal orientation independence, vertical sidewall profiles and CMOS compatibility. Low-stress silicon nitride, a popular membrane material, has an appreciable DRIE etch rate. To overcome this limitations DRIE can be accompanied by a brief wet chemical etch. This approach has been demonstrated using KOH or HF/Nitric/Acetic etchants, both of which have significantly lower etch rates on silicon nitride than does DRIE. The DRIE etch properties of composite membranes consisting of silicon dioxide and silicon nitride layers are also under evaluation due to the higher DRIE selectivity to silicon dioxide.

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8 p.

Notes

OSTI as DE98007104

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  • 194. meeting of the Electrochemical Society, Boston, MA (United States), 1-6 Nov 1998

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  • Other: DE98007104
  • Report No.: SAND--98-1778C
  • Report No.: CONF-981108--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 674597
  • Archival Resource Key: ark:/67531/metadc704149

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • August 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • May 5, 2016, 8:08 p.m.

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Manginell, R.P.; Frye-Mason, G.C.; Schubert, W.K.; Shul, R.J. & Willison, C.G. Microfabrication of membrane-based devices by deep-reactive ion etching (DRIE) of silicon, article, August 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc704149/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.