Silicon float-zone crystal growth as a tool for the study of defects and impurities

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Because of its ability to produce silicon crystals of exceptionally high purity and crystallographic perfection, the float-zone method lends itself to use as a tool for the controlled study of deliberately introduced defects and impurities in Si crystals and their effects on materials properties such as minority charge-carrier lifetime or photovoltaic conversion efficiency. Some examples of such studies are presented here. Defects the authors have studied include grain size, dislocations, swirl defects, and fast-cooling defects. Impurity studies have focused on H, N, Fe, and interactions between Fe and Ga. They used the bulk DC photoconductive decay lifetime characterization method and ... continued below

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Ciszek, T. F. & Wang, T. H. June 20, 2000.

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Because of its ability to produce silicon crystals of exceptionally high purity and crystallographic perfection, the float-zone method lends itself to use as a tool for the controlled study of deliberately introduced defects and impurities in Si crystals and their effects on materials properties such as minority charge-carrier lifetime or photovoltaic conversion efficiency. Some examples of such studies are presented here. Defects the authors have studied include grain size, dislocations, swirl defects, and fast-cooling defects. Impurity studies have focused on H, N, Fe, and interactions between Fe and Ga. They used the bulk DC photoconductive decay lifetime characterization method and small diagnostic solar cell characterization techniques to assess material quality. The low defect and impurity concentrations obtainable by float zoning allow baseline lifetimes over 20 milliseconds and photovoltaic device efficiencies over 22%; therefore, small effects of impurities and defects can be detected easily.

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  • Electrochemical Society Fall Conference, Phoenix, AZ (US), 10/22/2000--10/27/2000

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  • Report No.: NREL/CP-520-28569
  • Grant Number: AC36-99GO10337
  • Office of Scientific & Technical Information Report Number: 757170
  • Archival Resource Key: ark:/67531/metadc704124

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  • June 20, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 31, 2016, 7:12 p.m.

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Ciszek, T. F. & Wang, T. H. Silicon float-zone crystal growth as a tool for the study of defects and impurities, article, June 20, 2000; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc704124/: accessed November 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.